MIT January Operational Internship Experience 2011

This slide presentation reviews the 2011 January Operational Internship experience (JOIE) program which allows students to study operational aspects of spaceflight, how design affects operations and systems engineering in practice for 3 weeks. Topics include: (1) Systems Engineering (2) NASA Organization (3) Workforce Core Values (4) Human Factors (5) Safety (6) Lean Engineering (7) NASA Now (8) Press, Media, and Outreach and (9) Future of Spaceflight

Temperature behavior of spiral inductors on high resistivity substrate in SOI CMOS technology

This paper reviews and analyzes a compact model for integrated planar spiral inductors on standard and high resistivity substrates in silicon-on-insulator (SOI) technology. The inductors have been characterized over a temperature range from 25 to 200 degrees C. The temperature variation of each model parameter has been investigated. It demonstrates that only the variations of the metallic losses versus temperature have to be taken into account to model properly the high frequency behavior over a wide temperature range of a spiral inductor integrated on silicon high resistivity substrate. Based on these experimental and characterization results, guidelines for practical inductor designs in RFICs for high-temperature applications are drawn. (C) 2008 Elsevier Ltd. All rights reserved

The Design, Fabrication, and Performance of the East African Trial Leveraged Freedom Chair

The Leveraged Freedom Chair (LFC) is a lever-powered, wheelchair-based mobility aid designed specifically for use in the developing world. Its drivetrain optimally converts upper body power in a wide range of terrains, giving the LFC operational capabilities that extend beyond those of currently available mobility products. In this work we present the design and analysis process used to create an LFC for trial in East Africa. All of the moving parts in the LFC are made from bicycle components and the entire chair can be fabricated without any machining processes. This allows the LFC to be manufactured for the same price as existing mobility aids and repaired anywhere in the developing world. Eight prototypes were produced in Kenya during August 2009, with six distributed to mobility aid users throughout East Africa. After four months of testing, the subject-averaged propulsion efficiency using the LFC was 20% greater than that of existing mobility products. Performance results and feedback from the subjects indicate that the LFC is ideally suited for active wheelchair users who require the seating and postural support of a wheelchair, and who desire to travel on rough terrain under their own power. Test subjects’ input was also used to codify future improvements to the LFC design, including narrowing the stance of the chair and lowering the rider’s center of gravity.Massachusetts Institute of Technology. Office of the Dean for Graduate Education (Hugh Hampton Young Memorial Fellowship)Massachusetts Institute of Technology. Public Service CenterMassachusetts Institute of Technology. Department of Mechanical EngineeringMassachusetts Institute of Technology. IDEAS CompetitionMIT Edgerton CenterMassachusetts Institute of Technology. Undergraduate Research Opportunities ProgramDassault Systèmes SolidWorks CorporationClinton Global Initiativ

A 2.4-GHz Fully Integrated ESD-Protected Low-Noise Amplifier in 130-nm PD SOI CMOS Technology

This paper reviews and analyzes a fully integrated electrostatic discharge (ESD)-protected low-noise amplifier (LNA) for low-power and narrowband applications using a cascode inductive source degeneration topology, designed and fabricated in 130-nm CMOS silicon-on-insulator technology. The designed LNA shows 13-dB power gain at 2.4 GHz with a noise figure of 3.6 dB and input return loss of -13 dB for power consumption of 6.5 mW. An on-chip "plug-and-play" ESD protection strategy based on diodes and a power clamp is used at the input and output of the LNA, and has an ESD protection level up to 0.8-, 0.9-, and 1.4-A transmission line pulse current. This corresponds to 1.2-, 1.4-, and 2-kV human body model stress applied at, respectively, the RF input, RF output, and VDD bus. Measurement shows a minor RF performance degradation by adding the protection diodes

Sensors implementations in Silicon-on-Insulator CMOS compatible technology for micropower, radio-frequency or high-temperature applications

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Fully depleted SOI CMOS technology for heterogeneous micropower, high-temperature or RF microsystems

Based on an extensive review of research results on the material, process, device and circuit properties of thin-film fully depleted SOI CMOS, our work demonstrates that such a process with channel lengths of about 1 mum may emerge as a most promising and mature contender for integrated microsystems which must operate under low-voltage low-power conditions, at microwave frequencies and/or in the temperature range 200-350 degreesC. (C) 2001 Elsevier Science Ltd. All rights reserved